SGT6920NH 6.8 a, 20 v, r ds(on) 22 m ? dual-n enhancement mode mosfet elektronische bauelemente 23-jan-2013 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. h j f g k c l e b d a rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and ensure minimal power loss and heat dissipation. typical ap plications are dc-dc converters and power management in portab le and battery-powered products such as computers, printer , pcmcia cards, cellular and cordless telephones. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe tssop-8 saves board space. fast switching speed. high performance trench technology. package information absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current 1 t a =25 c i d 6.8 a t a =70 c 5.4 a pulsed drain current 2 i dm 30 a continuous source current (diode conduction) 1 i s 1.5 a power dissipation 1 t a =25 c p d 1.2 w t a =70 c 0.8 w operating junction and storage temperature range t j , t stg -55 ~ 150 c thermal resistance rating maximum junction to ambient 1 t Q 10 sec r ja 83 c / w steady state 120 notes: 1 surface mounted on 1 x 1 fr4 board. 2 pulse width limited by maximum junction temperat ure. package mpq leader size tssop-8l 3k 13 inch tssop-8 ref. millimeter ref. millimeter min. max. min. max. a 2.80 3.10 g 0.45 0.75 b 6.20 6.60 h 0.19 0.30 c 1.00 1.20 j 0.65 ref. d 4.30 4.50 k 0.05 0.15 e - 1.15 l 0.127 ref f 0.9 1.10 top view
SGT6920NH 6.8 a, 20 v, r ds(on) 22 m ? dual-n enhancement mode mosfet elektronische bauelemente 23-jan-2013 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition static gate-threshold voltage v gs(th) 0.4 - - v v ds =v gs , i d =250ua gate-body leakage i gss - - 100 na v ds =0, v gs =12v zero gate voltage drain current i dss - - 1 ua v ds =16v, v gs =0 - - 10 v ds =16v, v gs =0, t j = 55 c on-state drain current 1 i d(on) 25 - - a v ds =5v, v gs =4.5v drain-source on-resistance 1 r ds(on) - - 22 m v gs =4.5v, i d =1a - - 30 v gs =2.5v, i d =1a - - 46 v gs =1.8v, i d =1a forward transconductance 1 g fs - 25 - s v ds =10v, i d =1a diode forward voltage v sd - 0.7 - v i s =1a, v gs =0 dynamic 2 total gate charge q g - 6.2 - nc v ds =10v, v gs =4.5v, i d =1a gate-source charge q gs - 1 - gate-drain charge q gd - 1.9 - turn-on delay time t d(on) - 12 - ns v dd =10v, v gs =4.5v, r gen =10 , i d =1a rise time t r - 15 - turn-off delay time t d(off) - 56 - fall time t f - 17 - notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not subject to production testing.
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